irg5k50p5k50pm06e IRG7U100HF12B 1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 applications ? industrial motor drive ? uninterruptible power supply ? welding and cutting machine ? switched mode power supply ? induction heating v ces = 1200v i c = 100a at t c = 80c v ce(on) = 1.70v at i c = 100a igbt half - bridge pow ir 62 ? package absolute maximum ratings of igbt v ces collector to emitter voltage 1200 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 100 a t c = 25c 200 a i cm pulse collector current t j = 175c 200 a p d maximum power dissipation (igbt) t c = 25c, t j = 175c 580 w t j maximum igbt junction temperature 175 c t jop maximum operating junction temperature range - 40 to +150 c t stg - 40 to +125 c storage temperature base part number package type standard pack quantity orderable part number IRG7U100HF12B pow ir 62 ? box 45 IRG7U100HF12B features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 100% rbsoa tested rugged transient performance pow ir 62 ? package industry standard lead free rohs compliant, environmental friendly downloaded from: http:///
irg5k50p5k50pm06e IRG7U100HF12B 2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 switching characteristics of igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 950 ns t j = 25c v cc =600v, i c = 100a, r g = 15?, v ge =15v, inductive load 850 t j = 125c t r rise time 130 ns t j = 25c 140 t j = 125c t d(off) turn - off delay time 830 ns t j = 25c 900 t j = 125c t f fall time 120 ns t j = 25c 150 t j = 125c e on turn - on switching loss 9.5 mj t j = 25c 11.5 t j = 125c e off turn - off switching loss 7.6 mj t j = 25c 10.0 t j = 125c q g total gate charge 1100 nc t j = 25c c ies input capacitance 12.5 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.46 c res reverse transfer capacitance 0.31 rbsoa reverse bias safe operating area trapezoid i c = 200a,v cc = 960v, v p =1200v, r g = 15?, v ge = +15v to 0v, t j = 150c electrical characteristics of igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 1200 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 3.4 4.2 4.9 v i c = 4ma, v ce = v ge v ce(on) collector to emitter saturation voltage 1.70 2.00 v t j = 25c i c = 100a, v ge = 15v 1.90 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0 r gint internal gate resistance 2.35 downloaded from: http:///
irg5k50p5k50pm06e IRG7U100HF12B 3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of freewheeling diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 200 a diode continuous forward current, t c = 80c 100 i fm pulse diode current 200 a module characteristics min. typ. max. unit parameter v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v r jc junction - to - case (igbt) 0.26 c/w r jc junction - to - case (diode) 0.41 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w m power terminals screw: m6 3.0 5.0 nm m mounting screw: m6 4.0 6.0 nm g weight 230 g electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 2.20 v t j = 25c i f = 100a , v ge = 0v 2.70 2.40 t j = 125c i rr peak reverse recovery current 40 a t j = 25c i f 10 0a, di/dt=660a/ s, v rr = 600v, v ge = - 15v 55 t j = 125c q rr reverse recovery charge 4.7 c t j = 25c 10.6 t j = 125c e rec reverse recovery energy 1.5 mj t j = 25c 3.9 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG7U100HF12B 4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.1 typical igbt saturation characteristics fig.2 typical igbt output characteristics fig.3 typical freewheeling diode characteristics fig. 4 typical capacitance characteristics fig.5 typical switching loss vs. collector current fig.6 typical switching loss vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ce (v) i c (a) t j =125c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v 0 20 40 60 80 100 120 140 160 180 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ge =0v t j =125c t j =25c v f (v) i f (a) 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 22 24 v ge = 0v,f =1 mhz c ies c oes c (nf) v ce (v) 0 20 40 60 80 100 120 140 160 180 200 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ce (v) i c (a) v ge =15v t j =25c t j =125c 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 e (mj) i c (a) v cc =600v,v ge =+/-15v, rg=15 ohm,t j =125c e on e off e rec 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 e (mj) rg ( ? ) v cc =600v,v ge =+/-15v, i c =100a,t j =125c e on e off e rec downloaded from: http:///
irg5k50p5k50pm06e IRG7U100HF12B 5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.7 typical load current vs. frequency fig.8 reverse bias safe operation area (rbsoa) fig.9 typical transient thermal impedance (igbt) fig.10 typical transient thermal impedance (diode) 0.001 0.01 0.1 1 2 0.0 0.1 0.2 0.3 0.4 0.5 z th jc (k/w) t (s) z th jc :diode 0.001 0.01 0.1 1 2 0.0 0.1 0.2 0.3 z th jc (k/w) t (s) z th jc :igbt 0 20 40 60 80 100 120 140 160 180 200 1 10 100 duty cycle:50% t j =150c t c =80c rg =15 ohm,v ge =15v frequency (khz) load current (a) square wave: diode as specified v cc i 0 200 400 600 800 1000 1200 0 50 100 150 200 i c (a) v ces (v) module chip downloaded from: http:///
irg5k50p5k50pm06e IRG7U100HF12B 6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 internal circuit: package outline (unit: mm): qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifie rs web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/ downloaded from: http:///
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